چاپ کردن
سخنرانی علمی: Ohmic contacts to 2d nano-fabricated silicon structures in two-probe scanning tunneling microscopy ، دکتر علی خادمی - science- دانشکدگان علوم
Abstract:
Taking hardware computation to the atomic level is a goal, which seems in reach by the recent researches on controlling the electronic properties of individual and assemblies of atoms. However, producing functional atom scale devices requires elaborate efforts such as atom scale lithography and the interfaces between the macro-scale and atomic scale.
In this presentation, I will discuss the fabrication of nanostructures on the surface of Si(111) 7×7 and the 2-probe measurement of silicon's surface conductivity in the multi-probe scanning tunneling microscopy (STM). We developed new techniques to overcome the Schottky barrier and make Ohmic contacts on Si(111) surfaces for 2-probe measurements. Using these techniques, we measured the surface conductivity of Si(111) 7×7 accurately by diminishing the bulk conductivity. This work improves upon previous experimental reports where these measurements were made using 4-probes without eliminating the bulk contribution of the conductivity completely.